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Preliminary Technical Information
PolarHTTM HiPerFET IXFK 102N30P Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque, Terminal lead torque TO-264 Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C External lead current limit TC = 25C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 TC = 25 C Maximum Ratings 300 300 20 30 102 75 250 60 60 2.5 10 700 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A mJ J V/ns W C C C C C
VDSS ID25
RDS(on) trr
= =
300 V 102 A 33 m 200 ns
TO-264 (IXFK)
G
D
S
(TAB)
G = Gate S = Source
D = Drain
Features
l l
l
1.13/10 Nm/lb.in. 10 g
International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
l l l
Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 200 25 250 33 V V nA A A m
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2006 IXYS All rights reserved
DS99221E(05/06)
IXFK 102N30P
TO-264 Outline Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 45 57 7500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1150 230 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 (External) 28 130 30 224 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 110 S pF pF pF ns ns ns ns nC nC nC 0.18 C/W 0.15 C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD trr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 102 250 1.5 A A V
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V 0.8
200 ns C
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2

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